Новости - Радиочастотные компоненты - 10

The combined amplifier and switch provides strong WLAN signal available for consumers seeking to connect everywhere, all the time using phones, tablets, wearables and small Internet of Things devices NXP Semiconductors announced the introduction of ...

Ampleon announced the launch of a multi-purpose 20 Watt single-stage RF power amplifier driver transistor. The BLP9G0722-20G is a cost-effective 28 V LDMOS device that targets a wide range of applications from 0.4 to 2.7 GHz. Offering a peak ...

Ideal for High-Performance Wireless Infrastructure Applications, the UltraCMOS® PE42823 RF Switch Delivers Exceptional Single-event Peak Power Handling in a Small Form Factor Peregrine Semiconductor introduces the UltraCMOS® PE42823 , a ...

Analog Devices introduced a wideband gallium nitride (GaN) power amplifier that offers best-in-class performance within a compact design. Covering the 300 MHz to 6 GHz spectrum, the highly integrated HMC8205 provides significant benefits for system ...

Supporting a Frequency Range of 5MHz to 10GHz, the New Devices Deliver Superior RF Performance in Tiny 2 mm × 2 mm Packages Integrated Device Technology (IDT) introduced a new family of high-performance single-pole, double throw reflective ...

Analog Devices (ADI) introduced a 28-nanometer D/A converter as part of a new series of high speed digital-to-analog converters (D/A converters). The AD9172 meets the demands of gigahertz bandwidth applications and delivers the increased spectral ...

The new MRFX series and its flagship 1800 W transistor focus on ease of use NXP Semiconductors announced a new laterally diffused metal oxide semiconductor (LDMOS) technology for RF power transistors designed for operation up to 65 volts (V). This ...