.. Efficiency · Low QRR for Better THD and Lower EMI · 175°C Operating Junction Temperature for Ruggedness · Can Deliver up to 300W per Channel into 4 Load in Half-Bridge Configuration Amplifier G S D Спецификации: Полярность транзистора: N ...
.. Efficiency · Low QRR for Better THD and Lower EMI · 175°C Operating Junction Temperature for Ruggedness · Can Deliver up to 300W per Channel into 8 Load in Half-Bridge Configuration Amplifier G S D Спецификации: Полярность транзистора: N ...
.. Efficiency · Low QRR for Better THD and Lower EMI · 175°C Operating Junction Temperature for Ruggedness · Can Deliver up to 300W per Channel into 8 Load in Half-Bridge Configuration Amplifier G S D Спецификации: Continuous Drain Current Id: ...
.. efficiency · Low QRR for better THD and lower EMI · 175°C operating junction temperature for ruggedness · Can deliver up to 300W per channel into 8 load in half-bridge configuration amplifier G S D Спецификации: Полярность транзистора: N ...
.. efficiency Low Qg and Qsw for better THD and improved efficiency Low Qrr for better THD and lower EMI Can delivery up to 300W per channel into 8 load in half-bridge configuration amplifier Lead-free package VDS RDS(ON) typ. @ 10V Qg typ. ...