Datasheet RFD3055LESM9A - Fairchild Даташит N CHANNEL полевой транзистор, 60 В, 12 А TO-252AA

Наименование модели: RFD3055LESM9A

Производитель: Fairchild

Описание: N CHANNEL полевой транзистор, 60 В, 12 А TO-252AA

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RFD3055LE, RFD3055LESM, RFP3055LE
Data Sheet January 2002
11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs
These N-Channel enhancement-mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA49158.
Features

Спецификации:

• Continuous Drain Current Id: 11 мА
• Drain Source Voltage Vds: 60 В
• Количество выводов: 3
• Полярность транзистора: N Channel
• Рабочий диапазон температрур: -55°C ... +175°C
• Рассеиваемая мощность: 38 Вт
• RoHS: да