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Datasheet NXP PMEG6010ELR

NXP PMEG6010ELR

Производитель:	NXP
Серия:	PMEG6010ELR
Модель:	PMEG6010ELR

60 В, 1 А диод Шоттки с низким током утечки

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PMEG6010ELR
3 June 2014 SO D 123 W 60 V, 1 A low leakage current Schottky barrier rectifier Product data sheet 1. General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD123W small and flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits Average forward current: IF(AV) 1 A Reverse voltage: VR 60 V Extremely low leakage current Low forward voltage High power capability due to clip-bonding technology Small and flat lead SMD plastic package AEC-Q101 qualified High temperature Tj 175 °C 3. Applications Low voltage rectification High efficiency DC-to-DC conversion Switch mode power supply Reverse polarity protection Low power consumption applications 4. Quick reference data
Table 1. Symbol IF(AV) VF IR Quick reference data Parameter average forward current forward voltage reverse current Conditions = 0.5; f = 20 kHz; Tsp 170 °C; square wave IF = 1 A; Tj = 25 °C VR = 60 V; tp 300 µs; 0.02; Tj = 25 °C; pulsed 605 90 660 300 mV nA Min Typ Max 1 Unit A Scan or click this QR code to view the latest information for this product NXP Semiconductors PMEG6010ELR
60 V, 1 A low leakage current Schottky barrier rectifier 5. Pinning information
Table 2. Pin 1 2 Pinning information Symbol Description K A cathode[1] anode Simplified outline
1 2 Graphic symbol
1 2
sym001 SOD123W
The marking bar indicates the cathode. [1] 6. Ordering information
Table 3. Ordering information Package Name PMEG6010ELR SOD123W Description plastic surface mounted package; 2 leads Version SOD123W Type number 7. Marking
Table 4. Marking codes Marking code K1 Type number PMEG6010ELR PMEG6010ELR All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved Product data sheet 3 June 2014 2 / 15 NXP Semiconductors PMEG6010ELR
60 V, 1 A low leakage current Schottky barrier rectifier 8. Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol IF IF(AV) Parameter forward current average forward current Conditions Tsp = 165 °C; = 1 = 0.5; f = 20 kHz; Tsp 170 °C; square wave = 0.5; f = 20 kHz; Tamb 140 °C; square wave IFSM Ptot non-repetitive peak forward current total power dissipation tp = 8 ms; Tj(init) = 25 °C; square wave Tamb 25 °C
[2] [3] [1] [1] Min -55 -65 Max 1.41 1 1 50 680 1150 2140 175 175 175 Unit A A A A mW mW mW °C °C °C Tj Tamb Tstg junction temperature ambient temperature storage temperature
[1] [2] [3] Device mounted on a cer ...

Цены

PMEG6010ELR на РадиоЛоцман.Цены

Поставщик	Производитель	Наименование	Цена
Элитан	NXP	PMEG6010ELR/B115	6,37 руб.
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Цены » Профессиональная электроника и электротехника

Классификация производителя

Diodes > Medium power Schottky diodes ≥ 200 mA

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PMEG6010ELR
3 June 2014 SO D 123 W 60 V, 1 A low leakage current Schottky barrier rectifier Product data sheet 1. General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD123W small and flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits Average forward current: IF(AV) 1 A Reverse voltage: VR 60 V Extremely low leakage current Low forward voltage High power capability due to clip-bonding technology Small and flat lead SMD plastic package AEC-Q101 qualified High temperature Tj 175 °C 3. Applications Low voltage rectification High efficiency DC-to-DC conversion Switch mode power supply Reverse polarity protection Low power consumption applications 4. Quick reference data
Table 1. Symbol IF(AV) VF IR Quick reference data Parameter average forward current forward voltage reverse current Conditions = 0.5; f = 20 kHz; Tsp 170 °C; square wave IF = 1 A; Tj = 25 °C VR = 60 V; tp 300 µs; 0.02; Tj = 25 °C; pulsed 605 90 660 300 mV nA Min Typ Max 1 Unit A Scan or click this QR code to view the latest information for this product NXP Semiconductors PMEG6010ELR
60 V, 1 A low leakage current Schottky barrier rectifier 5. Pinning information
Table 2. Pin 1 2 Pinning information Symbol Description K A cathode[1] anode Simplified outline
1 2 Graphic symbol
1 2
sym001 SOD123W
The marking bar indicates the cathode. [1] 6. Ordering information
Table 3. Ordering information Package Name PMEG6010ELR SOD123W Description plastic surface mounted package; 2...