N-Channel Power MOSFET 50 V, 30 A, 40 mΩ
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Data Sheet September 2013 File Number 2253.2 N-Channel Power MOSFET 50V, 30A, 40 m
This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits. Formerly developmental type TA9771. Features 30A, 50V rDS(ON) = 0.040 SOA is Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Majority Carrier Device Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards" Ordering Information
PART NUMBER BUZ11_NR4941 PACKAGE TO-220AB BRAND BUZ11 NOTE: When ordering, use the entire part number. Symbol
D G S Packaging
JEDEC TO-220AB
SOURCE DRAIN GATE DRAIN (FLANGE) ©2001 Fairchild Semiconductor Corporation BUZ11 Rev. C0 BUZ11
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified BUZ11 Drain to Source Breakdown Voltage (Note 1) .VDS Drain to Gate Voltage (RGS = 20k) (Note 1) . VDGR Continuous Drain Current TC = 30oC . ID Pulsed Drain Current (Note 3) . IDM Gate to Source Voltage . .VGS Maximum Power Dissipation .PD Linear Derating Factor Operating and Storage Temperature TJ, TSTG DIN Humidity Category - DIN 40040 . IEC Climatic Category - DIN IEC 68-1 Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . TL Package Body for 10s, See Techbrief 334 . Tpkg 50 50 30 120 ±20 75 0.6 -55 to 150 E 55/150/56 300 260 UNITS V V A A V W W/oC oC oC oC CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS TEST CONDITIONS ID = 250µA, VGS = 0V VGS = VDS, ID = 1mA (Figure 9) TJ = 25oC, VDS = 50V, VGS = 0V TJ = 125oC, VDS = 50V, VGS = 0V Gate to Source Leakage Current Drain to Source On Resistance (Note 2) Forward Transconductance (Note 2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient IGSS rDS(ON) gfs td(ON) tr td(OFF) tf CISS COSS CRSS RJC RJA VDS = 25V, VGS = 0V, f = 1MHz (Figure 10) VGS = 20V, VDS = 0V ID = ...
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BUZ11Data Sheet September 2013 File Number 2253.2 N-Channel Power MOSFET 50V, 30A, 40 m
This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits. Formerly developmental type TA9771. Features 30A, 50V rDS(ON) = 0.040 SOA is Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Majority Carrier Device Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards" Ordering Information
PART NUMBER BUZ11_NR4941 PACKAGE TO-220AB BRAND BUZ11 NOTE: When ordering, use the entire part number. Symbol
D G S Packaging
JEDEC TO-220AB
SOURCE DRAIN GATE DRAIN (FLANGE) ©2001 Fairchild Semiconductor Corporation BUZ11 Rev. C0 BUZ11
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified BUZ11 Drain to Source Breakdown Voltage (Note 1) .VDS Drain to Gate Voltage (RGS = 20k) (Note 1) . VDGR Continuous Drain Current TC = 30oC . ID Pulsed Drain Current (Note 3) . IDM Gate to Source Voltage . .VGS Maximum Power Dissipation .PD Linear Derating Fac...
- Серия: BUZ11 (2)
- BUZ11_NR4941 BUZ11_R4941
На английском языке: Datasheet Fairchild BUZ11_NR4941
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