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Fairchild BUZ11_NR4941

Производитель:Fairchild
Серия:BUZ11
Модель:BUZ11_NR4941

N-Channel Power MOSFET 50 V, 30 A, 40 mΩ

Документы:

На английском языке: Datasheet Fairchild BUZ11_NR4941

Классификация производителя:

Discretes > FETs > MOSFETs

Выписка из документа:
BUZ11
Data Sheet September 2013 File Number 2253.2 N-Channel Power MOSFET 50V, 30A, 40 m
This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits. Formerly developmental type TA9771. Features 30A, 50V rDS(ON) = 0.040 SOA is Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Majority Carrier Device Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards" Ordering Information
PART NUMBER BUZ11_NR4941 PACKAGE TO-220AB BRAND BUZ11 NOTE: When ordering, use the entire part number. Symbol
D G S Packaging
JEDEC TO-220AB
SOURCE DRAIN GATE DRAIN (FLANGE) ©2001 Fairchild Semiconductor Corporation BUZ11 Rev. C0 BUZ11
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified BUZ11 Drain to Source Breakdown Voltage (Note 1) .VDS Drain to Gate Voltage (RGS = 20k) (Note 1) . VDGR Continuous Drain Current TC = 30oC . ID Pulsed Drain Current (Note 3) . IDM Gate to Source Voltage . .VGS Maximum Power Dissipation .PD Linear Derating Fac...

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