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Datasheet International Rectifier IRF530NSPBF

International Rectifier IRF530NSPBF

Производитель:International Rectifier

100 V Single N-Channel HEXFET Power MOSFET in a D2-Pak package. IRF530NS



    Исполнение: TO-263. MOSFET, N, 100V, 17A, D2-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:100V; Current, Id Cont:17A; Resistance, Rds On:0.11ohm; Voltage,...
    Цена IRF530NSPBF
    5 элементInternational Rectifierот 1 руб.
    ИнтерияInternational Rectifier34 руб.
    ТерраэлектроникаInfineonот 60 руб.
    КимInternational Rectifier115 руб.
    Кремнийпо запросу
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Выписка из документа:
PD - 95100 HEXFET Power MOSFET
Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description
VDSS = 100V RDS(on) = 90m D G S ID = 17A Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF530NL) is available for low-profile applications. D2Pak IRF530NSPbF TO-262 IRF530NLPbF Absolute Maximum Ratings
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max.
17 12 60 3.8 70 0.47 ± 20 9.0 7.0 7.4 -55 to + 175 300 (1.6mm from case ) Units
A W W W/°C V A mJ V/ns °C Thermal Resistance
RJC RJA Junction-to-Case Junction-to-Ambient (PCB Mounted,steady-state)** Typ.
­­­ ­­­ Max.
2.15 40 Units
°C/W www.irf.com 1
03/10/04 IRF530NS/LPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

На английском языке: Datasheet International Rectifier IRF530NSPBF

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