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Datasheet International Rectifier IRF5305PBF

International Rectifier IRF5305PBF

Производитель:International Rectifier
Серия:IRF5305PBF
Модель:IRF5305PBF

-55 V Single P-Channel HEXFET Power MOSFET in a TO-220AB package. IRF5305

Документы:

На английском языке: Datasheet International Rectifier IRF5305PBF

    IRF5305PBF на РадиоЛоцман.Цены — от 33,50 до 72,85 руб.
    Исполнение: TO-220AB. IRF5305 PBF MOSFET, P, -55V, -31A, TO-220; Transistor Type:MOSFET; Transistor Polarity:P; Voltage, Vds Typ:-55V; Current, Id Cont:31A; Resistance, Rds...
    Цены на IRF5305PBF
    ПоставщикПроизводительЦена
    ТерраэлектроникаInfineonот 33,50 руб.
    ДКО ЭлектронщикInfineonот 33,50 руб.
    ЭлитанInternational Rectifier42,00 руб.
    КремнийInternational Rectifierпо запросу
    ТаймЧипсInternational Rectifierпо запросу
    Все 14 предложений от 10 поставщиков »

Выписка из документа:
PD - 94788 IRF5305PbF
HEXFET® Power MOSFET
Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Lead-Free Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
D VDSS = -55V RDS(on) = 0.06 G S ID = -31A TO-220AB Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Max.
-31 -22 -110 110 0.71 ± 20 280 -16 11 -5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf in (1.1N m) Units
A W W/°C V mJ A mJ V/ns °C Thermal Resistance
Par...

  • Серия: IRF5305PBF (1)
    • IRF5305PBF

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