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Vishay SIHF530-GE3

Производитель:Vishay
Серия:IRF530, SiHF530
Модель:SIHF530-GE3

Power MOSFET

Документы:

На английском языке: Datasheet Vishay SIHF530-GE3

Классификация производителя:

MOSFETS

Варианты написания: SIHF530GE3, SIHF530 GE3

Выписка из документа:
IRF530, SiHF530
Vishay Siliconix Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 26 5.5 11 Single
D FEATURES
100 0.16 Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements Compliant to RoHS Directive 2002/95/EC Available RoHS*
COMPLIANT TO-220AB DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. G G D S S N-Channel MOSFET ORDERING INFORMATION
Package Lead (Pb)-free SnPb TO-220AB IRF530PbF SiHF530-E3 IRF530 SiHF530 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta TC = 25 °C Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque for 10 s 6-32 or M3 screw EAS IAR EAR PD dV/dt TJ, Tstg VGS at 10 V TC = 25 °C TC = 100 °C SYMBOL VDS VGS ID IDM LIMIT 100 ± 20 14 10 56 0.59 69 14 8.8 88 5.5 -55 to + 175 300d 10 1.1 W/°C mJ A mJ W V/ns °C lbf in N m A UNIT V Notes a. Repetitive rating; pulse width limited by maximum junction te...

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