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Datasheet Vishay IRF530STRR

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  IRF530S, SiHF530S
  Vishay Siliconix Power MOSFET
  PRODUCT SUMMARY
  VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 26 5.5 11 Single
  D FEATURES
  100 0.16 Halogen-free According to IEC 61249-2-21 Definition Surface Mount Available in Tape and Reel Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature Fast Switching Ease of Paralleling Compliant to RoHS Directive 2002/95/EC D2PAK (TO-263) DESCRIPTION G G D S S N-Channel MOSFET Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die size up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK (TO-263) is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application.
  D2PAK (TO-263) SiHF530STRL-GE3a IRF530STRLPbFa SiHF530STL-E3a D2PAK (TO-263) SiHF530STRR-GE3a IRF530STRRPbFa SiHF530STR-E3a ORDERING INFORMATION
  Package Lead (Pb)-free and Halogen-free Lead (Pb)-free Note a. See device orientation. D2PAK (TO-263) SiHF530S-GE3 IRF530SPbF SiHF530S-E3 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
  PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Linear Derating Factor (PCB Mount)e Single Pulse Avalanche Energyb Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Maximum Power Dissipation (PCB Mount)e Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) VGS at 10 V TC = 25 °C TC = 100 °C SYMBOL VDS VGS ID IDM LIMIT 100 ± 20 14 10 56 0.59 0.025 69 14 8.8 88 3.7 5.5 -55 to + 175 300d UNIT V A W/°C mJ A mJ W V/ns °C EAS IAR EAR TC = 25 °C TA = 25 °C PD dV/dt TJ, Tstg for 10 s Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 25 V, starting TJ = 25 °C, L = 528 H, Rg = 25 , IAS = 14 A (see fig. 12). c. ISD 14 A, dI/dt 140 A/s, VDD VDS, TJ 175 °C. d. 1.6 mm from case. e. When mounted on 1" square PCB (FR-4 or G-10 material). * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91020 S11-1046-Rev. C, 30-May-11 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO ...

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MOSFETs

• Серия: IRF530S, SiHF530S (9)
• IRF530S IRF530SPBF IRF530STRL IRF530STRLPBF IRF530STRR IRF530STRRPBF SIHF530S-GE3 SIHF530STRL-GE3 SIHF530STRR-GE3

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