DISCRETE SEMICONDUCTORS DATA SHEET BF998; BF998R
Silicon N-channel dual-gate
MOS-FETs
Product specification
Supersedes data of April 1991 1996 Aug 01 NXP Semiconductors Product specification Silicon N-channel dual-gate MOS-FETs BF998; BF998R FEATURES Short channel transistor with high forward transfer
admittance to input capacitance ratio d handbook, halfpage 4 3 Low noise gain controlled amplifier up to 1 GHz. g 2
g1 APPLICATIONS VHF and UHF applications with 12 V supply voltage,
such as television tuners and professional
communications equipment. 1 2
s,b Top view DESCRIPTION MAM039 Marking code: MOp. Depletion type field effect transistor in a plastic
microminiature SOT143B or SOT143R package with
source and substrate interconnected. The transistors are
protected against excessive input voltage surges by
integrated back-to-back diodes between gates and
source. Fig.1 Simplified outline (SOT143B)
and symbol; BF998. d handbook, halfpage CAUTION 3 4 The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling. g2
g1 PINNING 2 PIN SYMBOL 1 s, b 2 d drain 3 g2 gate 2 4 g1 gate 1 1
s,b DESCRIPTION Top view MAM040 source
Marking code: MOp. Fig.2 Simplified outline (SOT143R)
and symbol; BF998R. QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VDS drain-source voltage 12 V ID drain current 30 mA Ptot total power dissipation 200 mW yfs forward transfer admittance 24 mS Cig1-s input capacitance at gate 1 2.1 pF Crs reverse transfer capacitance f = 1 MHz 25 fF F noise figure f = 800 MHz 1 dB Tj operating junction temperature 150 C 1996 Aug 01 2 NXP Semiconductors Product specification Silicon N-channel dual-gate MOS-FETs BF998; BF998R LIMITING VALUES
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