Datasheet Infineon IRF7341 — Даташит

PD -95199 IRF7341PbF
Generation V Technology
l Ultra Low On-Resistance
l Dual N-Channel Mosfet
l Surface Mount
l Available in Tape & Reel
l Dynamic dv/dt Rating
l Fast Switching
l Lead-Free
Description HEXFET® Power MOSFET l S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 4 5 D2 G2 VDSS = 55V
RDS(on) = 0.050Ω Top View Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically …