Power Transistors 2SB1548, 2SB1548A
Silicon PNP epitaxial planar type
For power amplification
Complementary to 2SD2374 and 2SD2374A
Unit: mm ■ Features ■ Absolute Maximum Ratings
Parameter (TC=25˚C) Symbol Collector to 2SB1548 base voltage 2SB1548A Collector to 2SB1548 Ratings
–60 VCBO –80
–60 VCEO emitter voltage 2SB1548A –80 Unit
V V VEBO –5 Peak collector current ICP –5 A Collector current IC –3 A Emitter to base voltage Collector power TC=25°C
dissipation Ta=25°C Junction temperature Tj Storage temperature Tstg 150 ˚C –55 to +150 ˚C Symbol 2SB1548 current 2SB1548A Collector cutoff 2SB1548 current 2SB1548A Emitter cutoff current ICES
ICEO
IEBO Collector to emitter 2SB1548 voltage 2SB1548A Forward current transfer ratio Conditions 2.54±0.3
3 5.08±0.5 1:Base
2:Collector
3:Emitter
TO–220D Full Pack Package min typ max
–200 VCE = –80V, VBE = 0 –200 VCE = –30V, IB = 0 –300 VCE = –60V, IB = 0 –300 VEB = –5V, IC = 0 –1 IC = –30mA, IB = 0 hFE1* VCE = –4V, IC = –1A 70
10 VCE = –4V, IC = –3A VBE VCE = –4V, IC = –3A Collector to emitter saturation voltage VCE(sat) IC = –3A, IB = – 0.375A Transition frequency fT VCE = –10V, IC = – 0.5A, f = 10MHz Turn-on time ton Storage time tstg Fall time tf Unit
µA
µA
mA –60 VCEO hFE2 FE1 2 0.55±0.15 VCE = –60V, VBE = 0 Base to emitter voltage *h 0.8±0.1 (TC=25˚C) Parameter
Collector cutoff 2.6±0.1 1.6±0.2 W 2 ■ Electrical Characteristics 1.4±0.2 1 PC 2.9±0.2 φ3.2±0.1 V 25 4.6±0.2 9.9±0.3
3.0±0.5 ● High forward current transfer ratio hFE which has satisfactory linearity …
