Datasheet HGTG12N60A4D - Fairchild Даташит IGBT, TO-247 — Даташит

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Подробное описание

Производитель: Fairchild

Описание: IGBT, TO-247

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Краткое содержание документа:
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS
Data Sheet December 2001
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGTG12N60A4D, HGTP12N60A4D and HGT1S12N60A4DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors.

These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25 oC and 150oC. The IGBT used is the development type TA49335. The diode used in anti-parallel is the development type TA49371. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies. Formerly Developmental Type TA49337.
Features

Спецификации:

• Тип транзистора: IGBT
• DC Collector Current: 54 А
• Collector Emitter Voltage Vces: 2.7 В
• Power Dissipation Max: 167 Вт
• Collector Emitter Voltage V(br)ceo: 600 В
• Operating Temperature Range: -55°C to +150°C
• Корпус транзистора: TO-247
• Количество выводов: 3
• SVHC: No SVHC (18-Jun-2010)
• Alternate Case Style: SOT-249
• Current Ic Continuous a Max: 54 А
• Current Temperature: 25°C
• Device Marking: HGTG12N60A4D
• Fall Time tf: 95 нс
• Full Power Rating Temperature: 25°C
• Количество транзисторов: 1
• Package / Case: TO-247
• Power Dissipation: 167 Вт
• Power Dissipation Pd: 167 Вт
• Pulsed Current Icm: 96 А
• Rise Time: 16 нс
• SVHC (Secondary): Bis (2-ethyl(hexyl)phthalate) (DEHP) (18-Jun-2010)
• Termination Type: Through Hole
• Полярность транзистора: N
• Voltage Vces: 600 В

RoHS: есть

Дополнительные аксессуары:

• Fischer Elektronik - WLK 5