Datasheet Diodes ZTX849 — Даташит

NPN SILICON PLANAR MEDIUM POWER
HIGH CURRENT TRANSISTOR ZTX849
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C)
PARAMETER SYMBOL Base-Emitter
Turn-On Voltage VBE(on) MIN. TYP. MAX. UNIT CONDITIONS. 850 950 mV IC=5A, VCE=1V* Static Forward
Current Transfer
Ratio hFE Transition Frequency fT 100 MHz IC=100mA, VCE=10V
f=50MHz Output Capacitance Cobo 75 pF VCB=10V, f=1MHz* Switching Times ton
toff 45
630 ns
ns IC=1A, IB!=100mA
IB2=100mA, VCC=10V 200
200
170
65 100
100
100
30 IC=10mA, VCE=1V
IC=1A, VCE=1V*
IC=5A, VCE=1V*
IC=20A, VCE=1V* 300 *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% THERMAL CHARACTERISTICS
PARAMETER SYMBOL MAX. UNIT Rth(j-amb)
Rth(j-case) 150 …