Datasheet MTB2P50ET4G - ON Semiconductor Даташит Транзистор — Даташит

Наименование модели: MTB2P50ET4G

Купить MTB2P50ET4G на РадиоЛоцман.Цены — от 140 до 226 ₽ 13 предложений от 7 поставщиков Power MOSFET -500V -2A 6 Ohm Single P-Channel D2PAK, D2PAK 2 LEAD, 800-REEL
AiPCBA Весь мир	MTB2P50ET4G ON Semiconductor	140 ₽
ChipWorker Весь мир	MTB2P50ET4G ON Semiconductor	144 ₽
Acme Chip Весь мир	MTB2P50ET4G ON Semiconductor	по запросу
Кремний Россия и страны СНГ	MTB2P50ET4G	по запросу

Выбираем схему BMS для заряда литий-железофосфатных (LiFePO4) аккумуляторов

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Производитель: ON Semiconductor

Описание: Транзистор

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Краткое содержание документа:
MTB2P50E
Preferred Device
Power MOSFET 2 Amps, 500 Volts
P-Channel D2PAK
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time.

In addition, this Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.

Спецификации:

Полярность транзистора: P Channe

RoHS: есть