Datasheet Texas Instruments CSD16410Q5A — Даташит

CSD16410Q5A
www.ti.com SLPS205A – AUGUST 2009 – REVISED MAY 2010 N-Channel NexFET™ Power MOSFETs
Check for Samples: CSD16410Q5A FEATURES 1 2 Ultra Low Qg and Qgd
Low Thermal Resistance
Avalanche Rated
Pb Free Terminal Plating
RoHS Compliant
Halogen Free
SON 5mm x 6mm Plastic Package PRODUCT SUMMARY
VDS Drain to Source Voltage 25 V Qg Gate Charge Total (4.5V) 3.9 nC Qgd Gate Charge Gate to Drain RDS(on) Drain to Source On Resistance VGS(th) Threshold Voltage APPLICATIONS mΩ Package Media CSD16410Q5A 13-inch
reel TA = 25В°C unless otherwise stated V Qty Ship 2500 Tape and
Reel VALUE UNIT VDS Drain to Source Voltage 25 V VGS Gate to Source Voltage +16 / –12 V Continuous Drain Current, TC = 25°C 59 A Continuous Drain Current(1) 16 A IDM Pulsed Drain Current, TA = 25°C(2) 158 A PD Power Dissipation(1) 3 W TJ,
TSTG Operating Junction and Storage
Temperature Range –55 to 150 °C EAS Avalanche Energy, single pulse
ID = 32A, L = 0.1mH, RG = 25Ω 51 mJ ID
8 1 D 7 2 D D 6 3
D 5 4 D (1) RqJA = 42В°C/W on 1in2 Cu (2 oz.) on 0.060" thick FR4 PCB.
(2) Pulse width ≤300ms, duty cycle ≤2% P0093-01 RDS(ON) vs VGS Gate Charge 15 12
ID = 17A
VDS = 12.5V ID = 17A 14 10 13 VG -Gate Voltage -V RDS(on) -On-State Resistance -mΩ 6.8 1.9 SON 5X6 Plastic
Package Top View G VGS = 10V ABSOLUTE MAXIMUM RATINGS The NexFETв„ў power MOSFET has been designed
to minimize losses in power conversion applications. S mΩ Device DESCRIPTION S nC
9.6 ORDERING INFORMATION Point-of-Load Synchronous Buck Converter …