Datasheet Texas Instruments CSD17505Q5A — Даташит

CSD17505Q5A
SLPS301A – DECEMBER 2010 – REVISED JULY 2011 www.ti.com 30V, N-Channel NexFET™ Power MOSFETs
Check for Samples: CSD17505Q5A PRODUCT SUMMARY FEATURES 1 2 TA = 25В°C unless otherwise stated Ultralow Qg and Qgd
Low Thermal Resistance
Avalanche Rated
Pb Free Terminal Plating
RoHS Compliant
Halogen Free
SON 5-mm × 6-mm Plastic Package UNIT Drain to Source Voltage 30 V Qg Gate Charge Total (4.5V) 10 nC Qgd Gate Charge Gate to Drain 2.7 RDS(on) Drain to Source On Resistance VGS(th) Threshold Voltage nC VGS = 4.5V 3.7 mΩ VGS = 10V 2.9 mΩ 1.3 V ORDERING INFORMATION APPLICATIONS TYPICAL VALUE VDS Point-of-Load Synchronous Buck in
Networking, Telecom, and Computing Systems
Optimized for Control and Synchronous FET
Applications Device Package Media CSD17505Q5A SON 5-mm Г— 6-mm
Plastic Package 13-Inch
Reel Qty Ship 2500 Tape and
Reel ABSOLUTE MAXIMUM RATINGS
TA = 25В°C unless otherwise stated VALUE UNIT DESCRIPTION VDS Drain to Source Voltage 30 V The NexFETв„ў power MOSFET has been designed
to minimize losses in power conversion applications. VGS Gate to Source Voltage В±20 V Continuous Drain Current, TC = 25В°C 100 A Continuous Drain Current(1) 24 A Pulsed Drain Current, TA = 25В°C(2) 153 A Top View
S IDM
8 1 S 7 2 S 6 3 D D 5 4 (1) PD Power Dissipation 3.2 W TJ,
TSTG Operating Junction and Storage
Temperature Range –55 to 150 °C EAS Avalanche Energy, single pulse
ID = 76A, L = 0.1mH, RG = 25Ω 290 mJ D (1) Typical RθJA = 39°C/W on 1-inch2 (6.45-cm2), 2-oz.
(0.071-mm thick) Cu pad on a 0.06-inch (1.52-mm) thick FR4 …