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Datasheets Nexperia - 5

Производитель: "Nexperia"
Найдено: 101 Вывод: 81-100

Вид: Список / Картинки

  1. PNP high-voltage transistor in a SOT23 plastic package.
  2. Standard level gate drive N-channel enhancement mode MOSFET in a D2PAK package qualified to 175 °C. Part of Nexperia's NextPower Live portfolio, the PSMN3R7-100BSE delivers very low R DSon and a very strong linear-mode (SOA) performance.
Технология правильного хранения аккумуляторов и батареек по рекомендациям FANSO и EVE Energy
  1. SOT1023A with improved creepage and clearance to meet UL2595 requirements 280 Amp, logic level gate drive N-channel enhancement mode MOSFET in 150В °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed ...
  2. SOT1023A with improved creepage and clearance to meet UL2595 requirements. 300 Amp logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia's unique 'њSchottkyPlus'ќ technology delivers ...
  1. Bidirectional ElectroStatic Discharge (ESD) protection diodes in a very small SOD323 (SC-76) SMD plastic package designed to protect one signal line from the damage caused by ESD and other transients.
  2. Bidirectional ElectroStatic Discharge (ESD) protection diodes in a very small SOD323 (SC-76) SMD plastic package designed to protect one signal line from the damage caused by ESD and other transients.
  3. Bidirectional ElectroStatic Discharge (ESD) protection diode in a very small SOD323 (SC-76) SMD plastic package designed to protect one signal line from the damage caused by ESD and other transients.
  4. Bidirectional ElectroStatic Discharge (ESD) protection diodes in a very small SOD323 (SC-76) SMD plastic package designed to protect one signal line from the damage caused by ESD and other transients.
  5. Bidirectional ElectroStatic Discharge (ESD) protection diodes in a very small SOD323 (SC-76) SMD plastic package designed to protect one signal line from the damage caused by ESD and other transients.
  6. 74AHC1G4214 is a 14-stage divider and oscillator. It consists of a chain of 14 flip-flops. Each flip-flop divides the frequency of the previous flip-flop by two, consequently the 74AHC1G4214 counts up to 2 14 = 16384. The single inverting stage (X1 ...
  7. 74AHC1G4212 is a 12-stage divider and oscillator. It consists of a chain of 12 flip-flops. Each flip-flop divides the frequency of the previous flip-flop by two, consequently the 74AHC1G4212 counts up to 2 12 = 4096. The single inverting stage (X1 ...
  8. 74AHC1G4210 is a 10-stage divider and oscillator. It consists of a chain of 10 flip-flops. Each flip-flop divides the frequency of the previous flip-flop by two, consequently the 74AHC1G4210 counts up to 2 10 = 1024. The single inverting stage (X1 ...
  9. High power density, hyperfast PN-rectifier with high-efficiency planar technology, encapsulated in a small and flat lead CFP3 (SOD123W) Surface-Mounted Device (SMD) plastic package.
  10. High-voltage switching diode encapsulated in a small SOT23 Surface-Mounted Device (SMD) plastic package.
  11. NPN resistor-equipped transistor (see пїЅSimplified outline, symbol and pinningпїЅ for package details).
  12. Planar Schottky barrier diode encapsulated in a SOD110 very small ceramic SMD package.
  13. The 74LVC8T595 is an 8-bit serial-in/serial or parallel-out shift register with a storage register and 3-state outputs. Both the shift and storage register have separate clocks. Data is shifted on the positive-going transitions of the SHCP input. ...
  14. Dual buffer/line driver; 3-state
  15. Buffers with open-drain outputs
  16. N-channel TrenchMOS logic level FET

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