Datasheet NGTB20N120IHLWG - ON Semiconductor Даташит IGBT, 1200 В, 20 А, TO247 — Даташит
Наименование модели: NGTB20N120IHLWG
Купить NGTB20N120IHLWG на РадиоЛоцман.Цены — от 84 до 271 ₽ 16 предложений от 10 поставщиков ON SEMICONDUCTOR NGTB20N120IHLWG IGBT Single Transistor, 40 A, 1.8 V, 192 W, 1.2 kV, TO-247, 3 Pins | |||
| NGTB20N120IHLWG ON Semiconductor | 84 ₽ | ||
| NGTB20N120IHLWG ON Semiconductor | 121 ₽ | ||
| NGTB20N120IHLWG ON Semiconductor | 196 ₽ | ||
| NGTB20N120IHLWG ON Semiconductor | от 270 ₽ | ||
Подробное описание
Производитель: ON Semiconductor
Описание: IGBT, 1200 В, 20 А, TO247
Скачать Data SheetКраткое содержание документа:
NGTB20N120IHLWG IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss.
The IGBT is well suited for resonant or soft switching applications. Incorporated into the device is a rugged co-packaged free wheeling diode with a low forward voltage.
Features
http://onsemi.com
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Спецификации:
- Collector Emitter Voltage V(br)ceo: 1.2 кВ
- Collector Emitter Voltage Vces: 1.8 В
- DC Collector Current: 20 А
- Количество выводов: 3
- Корпус транзистора: TO-247
- Рабочий диапазон температрур: -55°C ... +150°C
- Рассеиваемая мощность: 250 Вт
- Тип транзистора: IGBT
- RoHS: да
- SVHC: No SVHC (19-Dec-2011)
