Радиолоцман Электроника en
расширенный поиск +
  

Datasheet Fairchild BUZ11_R4941

Datasheet Fairchild BUZ11_R4941

ПроизводительFairchild
СерияBUZ11
МодельBUZ11_R4941

N-Channel Power MOSFET 50 V, 30 A, 40 mΩ

Datasheets

  • Скачать » Datasheet, PDF, 848 Кб
    Выписка из документа ↓
    BUZ11
    Data Sheet September 2013 File Number 2253.2 N-Channel Power MOSFET 50V, 30A, 40 m
    This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits. Formerly developmental type TA9771. Features 30A, 50V rDS(ON) = 0.040 SOA is Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Majority Carrier Device Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards" Ordering Information
    PART NUMBER BUZ11_NR4941 PACKAGE TO-220AB BRAND BUZ11 NOTE: When ordering, use the entire part number. Symbol
    D G S Packaging
    JEDEC TO-220AB
    SOURCE DRAIN GATE DRAIN (FLANGE) ©2001 Fairchild Semiconductor Corporation BUZ11 Rev. C0 BUZ11
    Absolute Maximum Ratings
    TC = 25oC, Unless Otherwise Specified BUZ11 Drain to Source Breakdown Voltage (Note 1) .VDS Drain to Gate Voltage (RGS = 20k) (Note 1) . VDGR Continuous Drain Current TC = 30oC . ID Pulsed Drain Current (Note 3) . IDM Gate to Source Voltage . .VGS Maximum Power Dissipation .PD Linear Derating Factor Operating and Storage Temperature TJ, TSTG DIN Humidity Category - DIN 40040 . IEC Climatic Category - DIN IEC 68-1 Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . TL Package Body for 10s, See Techbrief 334 . Tpkg 50 50 30 120 ±20 75 0.6 -55 to 150 E 55/150/56 300 260 UNITS V V A A V W W/oC oC oC oC CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS TEST CONDITIONS ID = 250µA, VGS = 0V VGS = VDS, ID = 1mA (Figure 9) TJ = 25oC, VDS = 50V, VGS = 0V TJ = 125oC, VDS = 50V, VGS = 0V Gate to Source Leakage Current Drain to Source On Resistance (Note 2) Forward Transconductance (Note 2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient IGSS rDS(ON) gfs td(ON) tr td(OFF) tf CISS COSS CRSS RJC RJA VDS = 25V, VGS = 0V, f = 1MHz (Figure 10) VGS = 20V, VDS = 0V ID = ...

Цены

Выписка из документа:
BUZ11
Data Sheet September 2013 File Number 2253.2 N-Channel Power MOSFET 50V, 30A, 40 m
This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits. Formerly developmental type TA9771. Features 30A, 50V rDS(ON) = 0.040 SOA is Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Majority Carrier Device Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards" Ordering Information
PART NUMBER BUZ11_NR4941 PAC...

Модельный ряд

Серия: BUZ11 (2)

Классификация производителя

  • Discretes > FETs > MOSFETs

На английском языке: Datasheet Fairchild BUZ11_R4941

Рекомендуемые материалы по теме:

При перепечатке материалов с сайта прямая ссылка на РадиоЛоцман обязательна.

Приглашаем авторов статей и переводов к публикации материалов на страницах сайта.

Срезы ↓
Светодиод KPA-2106QWF-D
Светодиод KPA-2106QWF-D
Светодиод белый, 350 мКд
Цена: от 2.25 руб.
Доставка: Россия и страны СНГ
Астрономический для уличного освещения таймер РЭВ-225
Астрономический таймер для уличного освещения РЭВ-225
Автоматически вычисляется время восхода и заката солнца на основе введенных координат и текущего времени, позволяя управлять освещением без использования внешних датчиков.
Цена: от 1500 руб.
Доставка: Россия
Источник питания Актаком APS-1303
Источник питания Актаком APS-1303
2 LED дисплея, 0…30 В, 0…3 А
Цена: от 5 900 руб.
Доставка: Россия и страны СНГ
радиолоцман вконтакте радиолоцман одноклассники радиолоцман facebook радиолоцман twitter радиолоцман google плюс

Рейтинг@Mail.ru