Datasheet Texas Instruments CSD17553Q5A — Даташит

CSD17553Q5A
www.ti.com SLPS373 – MAY 2012 30V, N-Channel NexFET™ Power MOSFETs
Check for Samples: CSD17553Q5A FEATURES 1 PRODUCT SUMMARY Ultralow Qg and Qgd
Low Thermal Resistance
Avalanche Rated
Pb Free Terminal Plating
RoHS Compliant
Halogen Free
SON 5-mm Г— 6-mm Plastic Package VDS Drain to Source Voltage Qg Gate Charge Total (4.5V) Qgd Gate Charge Gate to Drain RDS(on) Drain to Source On Resistance VGS(th) Threshold Voltage DESCRIPTION
The NexFET power MOSFET has been designed to
minimize losses in power conversion applications.
Top View
1 8 D S 2 7 D S 3 G 4 6 D 5 D 4.7 nC
3.5 mΩ VGS = 10V 2.7 mΩ 1.5 V ORDERING INFORMATION Point of load Synchronous Buck in
Networking, Telecom and Computing Systems
Optimized for Control and Synchronous FET
Applications S V
nC VGS = 4.5V Device Package Media CSD17553Q5A SON 5-mm Г— 6-mm
Plastic Package 13-Inch
Reel APPLICATIONS 30
17.5 Qty Ship 2500 Tape and
Reel ABSOLUTE MAXIMUM RATINGS
TA = 25В°C unless otherwise stated VALUE UNIT VDS Drain to Source Voltage 30 V VGS Gate to Source Voltage +/-20 V Continuous Drain Current, TC = 25В°C 100 A Continuous Drain Current, TA = 25В°C(1) 23.5 A IDM Pulsed Drain Current, TA = 25В°C(2) 151 A PD Power Dissipation(1) 3.1 W TJ, …