Datasheet BUL45D2G - ON Semiconductor Даташит Биполярный транзистор, NPN, 400 В, TO-220 — Даташит
Наименование модели: BUL45D2G
Купить BUL45D2G на РадиоЛоцман.Цены — от 24 до 316 ₽ 37 предложений от 19 поставщиков Транзистор: NPN; биполярный; 400В; 5А; 75Вт; TO220AB; 1,15÷1,39мм | |||
BUL45D2G ON Semiconductor | 24 ₽ | ||
BUL312 BUL44 BUL45 BUL416 BUL49D BUL45D2G BUL58D BUL59 BUL510 BUL57 BUL67 BUL654 BUL741 BUL742A BUL742C TO-220 | 43 ₽ | ||
BUL45D2G ON Semiconductor | от 199 ₽ | ||
BUL45D2G ON Semiconductor | от 316 ₽ |
Подробное описание
Производитель: ON Semiconductor
Описание: Биполярный транзистор, NPN, 400 В, TO-220
Краткое содержание документа:
BUL45D2G High Speed, High Gain Bipolar NPN Power Transistor
with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network
The BUL45D2G is state-of-art High Speed High gain BiPolar transistor (H2BIP).
High dynamic characteristics and lot-to-lot minimum spread (±150 ns on storage time) make it ideally suitable for light ballast applications. Therefore, there is no need to guarantee an hFE window. It's characteristics make it also suitable for PFC application.
Features http://onsemi.com
POWER TRANSISTOR 5.0 AMPERES, 700 VOLTS, 75 WATTS
Спецификации:
- Полярность транзистора: N Channel
- Collector Emitter Voltage V(br)ceo: 400 В
- Transition Frequency Typ ft: 13 МГц
- Power Dissipation Pd: 75 Вт
- DC Collector Current: 5 А
- DC Current Gain Max (hfe): 32
RoHS: есть
Дополнительные аксессуары:
- WAKEFIELD SOLUTIONS - 273-AB