Datasheet Texas Instruments LMG1210 — Даташит
| Производитель | Texas Instruments |
| Серия | LMG1210 |
200V, 1.5A/3A Half Bridge GaN Driver With Adjustable Dead-time
Datasheets
LMG1210 200-V, 1.5-A, 3-A Half-Bridge GaN Driver With Adjustable Dead Time datasheet
PDF, 596 Кб, Файл опубликован: 14 фев 2018
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Цены
 Купить LMG1210 на РадиоЛоцман.Цены — от 338 до 896 ₽13 предложений от 9 поставщиков 200-V, 1.5-A, 3-A Half-Bridge GaN Driver With Adjustable Dead Time | |||
| LMG1210RVRT Texas Instruments | 338 ₽ | ||
| LMG1210RVRT Texas Instruments | 355 ₽ | ||
| LMG1210RVRR Texas Instruments | от 896 ₽ | ||
| LMG1210EVM-012 Texas Instruments | по запросу | ||
Статус
| LMG1210RVRR | LMG1210RVRT | XLMG1210RVRT | |
|---|---|---|---|
| Статус продукта | Анонсирован | Анонсирован | В производстве |
| Доступность образцов у производителя | Нет | Нет | Да |
Корпус / Упаковка / Маркировка
| LMG1210RVRR | LMG1210RVRT | XLMG1210RVRT | |
|---|---|---|---|
| N | 1 | 2 | 3 |
| Pin | 19 | 19 | 19 |
| Package Type | RVR | RVR | RVR |
| Package QTY | 3000 | 250 | 250 |
| Carrier | LARGE T&R | SMALL T&R | SMALL T&R |
| Width (мм) | 4 | 4 | 4 |
| Length (мм) | 3 | 3 | 3 |
| Thickness (мм) | 0.75 | 0.75 | 0.75 |
| Mechanical Data | Скачать | Скачать | Скачать |
Параметры
| Parameters / Models | LMG1210RVRR | LMG1210RVRT | XLMG1210RVRT |
|---|---|---|---|
| Bus Voltage, В | 200 | 200 | 200 |
| Driver Configuration | Half Bridge | Half Bridge | Half Bridge |
| Fall Time, нс | 0.5 | 0.5 | 0.5 |
| Input Threshold | TTL | TTL | TTL |
| Input VCC(Max), В | 18 | 18 | 18 |
| Input VCC(Min), В | 6 | 6 | 6 |
| Количество каналов | 2 | 2 | 2 |
| Рабочий диапазон температур, C | от -40 до 125 | от -40 до 125 | от -40 до 125 |
| Package Group | WQFN | WQFN | WQFN |
| Package Size: mm2:W x L, PKG | 19WQFN: 12 mm2: 4 x 3(WQFN) | 19WQFN: 12 mm2: 4 x 3(WQFN) | 19WQFN: 12 mm2: 4 x 3(WQFN) |
| Peak Output Current, A | 3 | 3 | 3 |
| Power Switch | MOSFET,GaNFET | MOSFET,GaNFET | MOSFET,GaNFET |
| Prop Delay, нс | 10 | 10 | 10 |
| Rating | Catalog | Catalog | Catalog |
| Rise Time, нс | 0.5 | 0.5 | 0.5 |
Экологический статус
| LMG1210RVRR | LMG1210RVRT | XLMG1210RVRT | |
|---|---|---|---|
| RoHS | See ti.com | See ti.com | See ti.com |
Application Notes
- Optimizing Efficiency Through Dead Time Control With the LMG1210 GaN DriverPDF, 139 Кб, Файл опубликован: 14 фев 2018
Dead time is an extremely important design parameter in some high-frequency converters using GaN.Dead time becomes ever more important as the frequency of operation increases. This reportdemonstrates the need for dead time optimization by measuring efficiency of a converter with varyingdead times. This report also discusses the various sources of propagation delay mismatch which causedead
Модельный ряд
Серия: LMG1210 (3)
Классификация производителя
- Semiconductors > Power Management > Gallium Nitride (GaN) Solutions > GaN FET Drivers
