Datasheet Fujitsu MB85RS64TUPN-G-AMEWE1 — Даташит

FUJITSU SEMICONDUCTOR
DATA SHEET MR501-00052-1v0-E Memory FRAM 64 K (8 K п‚ґ 8) Bit SPI MB85RS64TU
в–  DESCRIPTION
MB85RS64TU is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words п‚ґ
8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile
memory cells.
MB85RS64TU adopts the Serial Peripheral Interface (SPI).
The MB85RS64TU is able to retain data without using a back-up battery, as is needed for SRAM.
The memory cells used in the MB85RS64TU can be used for 1013 read/write operations, which is a significant
improvement over the number of read and write operations supported by Flash memory and E2PROM.
MB85RS64TU does not take long time to write data like Flash memories or E2PROM, and MB85RS64TU
takes no wait time.
MB85RS64TU is suitable for application in extremely cold region, such as flow meter or sensor device and
so forth, with extended operating temperature range. в–  FEATURES Bit configuration : 8,192 words п‚ґ 8 bits Serial Peripheral Interface : SPI (Serial Peripheral Interface)
Correspondent to SPI mode 0 (0, 0) and mode 3 (1, 1) Operating frequency : 10 MHz (Max) High endurance : 1013 times / byte Data retention
: 10 years ( пЂ« 85 п‚°C) Operating power supply voltage : 1.8 V to 3.6 V Low power consumption : Operating power supply current 0.8 mA (Max@10 MHz)
Standby current 9 пЃ­A (Typ) Operation ambient temperature range : пЂ­ 55 п‚°C to +85 п‚°C Package
: 8-pin plastic SOP (FPT-8P-M02)
8-pin plastic SON (LCC-8P-M04)
RoHS compliant Copyright 2018FUJITSU SEMICONDUCTOR LIMITED
2018.4 MB85RS64TU
в–  PIN ASSIGNMENT
(TOP VIEW) CS SO WP VSS 1 (TOP VIEW) …