PNP Silicon AF Transistors
BC856.BC860
PNP Silicon AF Transistors • For AF input stages and driver applications 3 • High current gain
• Low collector-emitter saturation voltage
• Low noise between 30 Hz and 15 kHz
• Complementary types: BC846, BC847, BC848 2 BC849, BC850 (NPN) 1 Type Marking Pin Configuration BC856A 3As 1=B 2=E 3=C SOT23 BC856B 3Bs 1=B 2=E 3=C SOT23 BC857A 3Es 1=B 2=E 3=C SOT23 BC857B 3Fs 1=B 2=E 3=C SOT23 BC857C 3Gs 1=B 2=E 3=C SOT23 BC858A 3Js 1=B 2=E 3=C SOT23 BC858B 3Ks 1=B 2=E 3=C SOT23 BC858C 3Ls 1=B 2=E 3=C SOT23 BC859B 4Bs 1=B 2=E 3=C SOT23 BC859C 4Cs 1=B 2=E 3=C SOT23 BC860B 4Fs 1=B 2=E 3=C SOT23 1 VPS05161 Package Jan-28-2005 BC856.BC860 Maximum Ratings
Parameter Symbol BC856 BC857 BC858 BC860 BC859 Unit Collector-emitter voltage VCEO 65 45 30 V Collector-base voltage VCBO 80 50 30 Collector-emitter voltage VCES 80 50 30 Emitter-base voltage VEBO 5 5 5 DC collector current IC 100 mA Peak collector current ICM 200 mA Peak base current IBM 200 Peak emitter current IEM 200 Total power dissipation, TS = 71 °C Ptot 330 mW Junction temperature Tj 150 °C Storage temperature Tstg -65 . 150 Thermal Resistance Junction -soldering point1) ≤240 RthJS K/W Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter Symbol Values
min. typ. Unit
max. DC Characteristics
V(BR)CEO Collector-emitter breakdown voltage
IC = 10 mA, IB = 0 BC856 65 -BC857/860 45 -BC858/859 30 -BC856 80 -BC857/860 50 -BC858/859 30 -V(BR)CBO Collector-base breakdown voltage
IC = 10 µA, IE = 0 V 1For calculation of R
thJA please refer to Application Note Thermal Resistance 2 Jan-28-2005 BC856.BC860 Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
min. typ. Unit
max. DC Characteristics
IC = 10 µA, VBE = 0 V V(BR)CES Collector-emitter breakdown voltage BC856 80 -BC857/860 50 -BC858/859 30 -V(BR)EBO 5 -ICBO -15 nA ICBO -5 µA Emitter-base breakdown voltage
IE = 1 µA, IC = 0
Collector cutoff current
VCB = 30 V, IE = 0
Collector cutoff current …
