NPN General Purpose Amplifier
MPSA06 / MMBTA06 / PZTA06
NPN General-Purpose Amplifier
• This device is designed for general-purpose amplifier
applications at collector currents to 300 mA.
• Sourced from process 12. MPSA06 MMBTA06 PZTA06
C C E E
B TO-92 B SOT-23 SOT-223 Mark: 1G E B C Ordering Information
Part Number Top Mark Package Packing Method MPSA06 MPSA06 TO-92 3L Bulk MMBTA06 1G SOT-23 3L Tape and Reel PZTA06 A06 SOT-223 4L Tape and Reel Absolute Maximum Ratings(1), (2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Parameter Value Unit 80 V VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage 80 V VEBO Emitter-Base Voltage 4.0 V Collector Current -Continuous 500 mA -55 to +150 °C IC
TJ, TSTG Operating and Storage Junction Temperature Range Notes:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or
low-duty-cycle operations. © 1997 Fairchild Semiconductor Corporation
MPSA06 / MMBTA06 / PZTA06 Rev. 1.1.0 www.fairchildsemi.com MPSA06 / MMBTA06 / PZTA06 — NPN General-Purpose Amplifier September 2014 Values are at TA = 25°C unless otherwise noted. Symbol Max. Parameter Unit MPSA06 MMBTA06(3) PZTA06(4) Total Device Dissipation 625 350 1000 mW Derate Above 25°C 5.0 2.8 8.0 mW/°C RθJC Thermal Resistance, Junction-to-Case 83.3 RθJA Thermal Resistance, Junction-to-Ambient 200 357 125 PD °C/W
3. Device is mounted on FR-4 PCB 1.6 inch x 1.6 inch x 0.06 inch.
4. Device is mounted on FR-4 PCB 36 mm x 18 mm x 1.5 mm, mounting pad for the collector lead minimum 6 cm2. Electrical Characteristics
Values are at TA = 25°C unless otherwise noted. Symbol Parameter Conditions Min. Max. Unit Off Characteristics
V(BR)CEO Collector-Emitter Breakdown Voltage(5) IC = 1.0 mA, IB = 0 80 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 100 μA, IC = 0 4.0 V ICEO Collector Cut-Off Current VCE = 60 V, IB = 0 0.1 μA ICBO Collector Cut-Off Current VCB = 80 V, IE = 0 0.1 μA On Characteristics
hFE DC Current Gain IC = 10 mA, VCE = 1.0 V 100 IC = 100 mA, VCE = 1.0 V 100 VCE(sat) Collector-Emitter Saturation Voltage IC = 100 mA, IB = 10 mA 0.25 V VBE(on) Base-Emitter On …