AlGaAs Infrared Emitting Diode
SEP8706
AlGaAs Infrared Emitting Diode FEATURES
• Side-looking plastic package • 50¡ (nominal) beam angle
• 880 nm wavelength
• Higher output power than GaAs at equivalent
drive currents
• Mechanically and spectrally matched to
SDP8406 phototransistor, SDP8106
photodarlington and SDP8000/8600 series
Schmitt trigger INFRA-20.TIF DESCRIPTION
The SEP8706 is an aluminum gallium arsenide infrared
emitting diode molded in a side-emitting smoke gray
plastic package. The chip is positioned to emit radiation
through a plastic lens from the side of the package.
These devices typically exhibit 70% greater power
intensity than gallium arsenide devices at the same
forward current. OUTLINE DIMENSIONS in inches (mm)
Tolerance
3 plc decimals
±0.005(0.12)
2 plc decimals ±0.020(0.51) DIM_071.ds4 52 h Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible. SEP8706 …
