OptiMOS Power-Transistor
Type BSC034N06NS OptiMOSTM Power-Transistor
Features Product Summary • Optimized for high performance SMPS, e.g. sync. rec.
• 100% avalanche tested
• Superior thermal resistance VDS 60 V RDS(on),max 3.4 mW ID • N-channel
1) • Qualified according to JEDEC for target applications 100 A QOSS 37 nC QG(0V.10V) 33 nC • Pb-free lead plating; RoHS compliant
• Halogen-free according to IEC61249-2-21 PG-TDSON-8 Type Package Marking BSC034N06NS PG-TDSON-8 034N06NS Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter Symbol Conditions Continuous drain current ID Value V GS=10 V, T C=25 °C 100 V GS=10 V, T C=100 °C 71 V GS=10 V, T C=25 °C,
R thJA =50K/W 2) 21 Unit
A Pulsed drain current3) I D,pulse T C=25 °C 400 Avalanche energy, single pulse4) E AS I D=50 A, R GS=25 W 71 mJ Gate source voltage V GS ±20 V 1) J-STD20 and JESD22 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3)
4) See figure 3 for more detailed information
See figure 13 for more detailed information Rev.2.0 page 1 2013-10-17 BSC034N06NS
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter Symbol Conditions Power dissipation P tot Value T C=25 °C 74 T A=25 °C, T j, T stg -55 . 150 IEC climatic category; DIN IEC 68-1 Parameter W 2.5 R thJA=50 K/W 2)
Operating and storage temperature Unit °C 55/150/56 Values Symbol Conditions Unit min. typ. max. bottom -1.7 top -20 6 cm2 cooling area2) -50 Thermal characteristics
Thermal resistance, junction -case Device on PCB R thJC R thJA K/W Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 60 -Gate threshold voltage V GS(th) V DS=V GS, I D=41 µA 2.1 2.8 3.3 Zero gate voltage drain current I DSS V DS=60 V, V GS=0 V,
T j=25 °C -0.1 1 V DS=60 V, V GS=0 V,
T j=125 °C -10 100 V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V -10 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=50 A -2.8 3.4 mW V GS=6 V, I D=12.5 A -4.0 5.1 -1.3 2.0 W 46 93 -S Gate resistance RG Transconductance g fs Rev.2.0 |V DS|>2|I D|R DS(on)max,
I D=50 A page 2 2013-10-17 BSC034N06NS
Parameter Values Symbol Conditions Unit min. typ. max. -2400 3000 -560 700 Dynamic characteristics …
