OptiMOS -P Power-Transistor
SPD50P03L G OptiMOS -P Power-Transistor
® Product Summary Features V DS • P-Channel -30 R DS(on),max • Enhancement mode V 7 ID mΩ -50 A • Logic level
• 175°C operating temperature
• Avalanche rated
PG-TO252-5 • dv /dt rated
• High current rating
• Pb-free lead-plating, RoHS compliant Type Package Marking Tape and reel information Lead Free SPD50P03L G PG-TO252-5 50P03L 1000 pcs / reel Yes Packing
Non dry Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter Symbol Conditions Continuous drain current ID T C=25 °C1) -50 T C=100 °C1) -50 Pulsed drain current I D,pulse T C=25 °C -200 Avalanche energy, single pulse E AS I D=-50 A, R GS=25 Ω 256 Reverse diode dv /dt dv /dt I D=-50 A, V DS=24 V,
di /dt =-200 A/µs,
T j,max=175 °C -6 Gate source voltage V GS Power dissipation P tot Operating and storage temperature T j, T stg T C=25 °C Unit
A mJ
kV/µs ±20 V 150 W -55…+175 °C ESD class HBM 1C Soldering temperature 260
55/175/56 IEC climatic category; DIN IEC 68-1 Rev. 1.9 Value page 1 2012-09-13 SPD50P03L G
Parameter Values Symbol Conditions Unit min. typ. max. -1 minimal footprint -75 6 cm2 cooling area2) -50 Thermal characteristics
Thermal resistance, junction -case R thJC Thermal resistance,
junction -ambient R thJA K/W Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=-250 µA -30 -Gate threshold voltage V GS(th) V DS=V GS,
I D=-250 µA -1 -1.5 -2 Zero gate voltage drain current I DSS V DS=-30 V, V GS=0 V,
T j=25 °C -0.1 -1 V DS=-30 V, V GS=0 V,
T j=175 °C -10 -100 V µA Gate-source leakage current I GSS V GS=-20 V, V DS=0 V -10 -100 nA Drain-source on-state resistance R DS(on) V GS=-4.5 V,
I D=-30 A -8.5 12.5 mΩ Drain-source on-state resistance R DS(on) V GS=-10 V, I D=-50 A -5.7 7.0 Transconductance g fs |V DS|>2|I D|R DS(on)max, …
