Datasheet Motorola MTD20P06HDL — Даташит
| Производитель | Motorola |
| Серия | MTD20P06HDL |
| Модель | MTD20P06HDL |
P–Channel Enhancement–Mode Silicon Gate
Datasheets
Datasheet MTD20P06HDL
PDF, 318 Кб, Язык: анг., Файл закачен: 3 дек 2019, Страниц: 12
P–Channel Enhancement–Mode Silicon Gate
P–Channel Enhancement–Mode Silicon Gate
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Цены
Купить MTD20P06HDL на РадиоЛоцман.Цены — от 33 до 191 723 ₽ 10 предложений от 10 поставщиков 15A, 60V, 0.175ohm, P-CHANNEL, Si, POWER, MOSFET, CASE 369C-01, DPAK-3 | |||
| MTD20P06HDL ON Semiconductor | 33 ₽ | ||
| MTD20P06HDL ON Semiconductor | 34 ₽ | ||
| MTD20P06HDL ON Semiconductor | по запросу | ||
| MTD20P06HDL | по запросу | ||
Подробное описание
TMOS Power FET Logic Level
- 15 Amperes
- 60 Volts
- RDS(on) = 175 MΩ
This advanced high–cell density HDTMOS E–FET is designed to withstand high energy in the avalanche and commutation modes.
The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low–voltage, high–speed switching applications in power supplies, converters and PWM motor controls, and other inductive loads. The avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched, and to offer additional safety margin against unexpected voltage transients.
Классификация производителя
- MOSFETs
