Datasheet GaNPower International GPI8HINOIC — Даташит

GaNPower International Inc.
WWW. IGANPOWER.COM
230 -3410 LOUGHEED HWY
VANCOUVER, BC, V5M 2A4 CANADA GPI8HINOIC
GaN Power IC in DFN5x6 Package
Preliminary Datasheet version: 1.0 Features
BVdss Rdson Ids 650V 170 mΩ 7.5 A  Edge-triggered high-side power IC  Small transformer isolation  Low Rds and high dv/dt capability  Extremely low input capacitance  Fast switching  Low Profile Applications
 High-side switch in switching power applications  Power adapters and power delivery chargers Description
These devices are power IC based on 650 V Power GaN HEMTs using proprietary (US patent pending) E-mode GaN
on silicon technology. The gate driver is integrated with the main power transistor resulting in fast switching, high
system power density and low cost. Edge triggering narrow pulse is used to control device turn-on/off. This results
in high noise immunity and small and inexpensive transformer for isolation and level shifting for the high-side
switch in a half bridge application. For more information, visit us at: www.iganpower.com, or contact us at [email protected] GaNPower International Inc.
WWW. IGANPOWER.COM
230 -3410 LOUGHEED HWY
VANCOUVER, BC, V5M 2A4 CANADA Basic Parameters Test data Parameters Conditions 1 BVdss Drain-Source breakdown voltage Vgs=0V
Id=10uA 2 Rdson Static drain-source on resistance,
TC = 25℃ Vgs=6V
Id=1.8A 3 Vdd Drive supply voltage 4 Vin1 Turn-off narrow pulse triggering
pulse 5 Vin2 Turn-on narrow pulse triggering
pulse Min 1
2
3 …