Datasheet GaNPower International GPI8HINOIC — Даташит

ПроизводительGaNPower International

GaN Power IC in DFN5x6 Package


Preliminary Datasheet GPI8HINOIC
PDF, 540 Кб, Язык: анг., Файл закачен: 26 дек 2019, Страниц: 7
GaN Power ICin DFN5x6 Package
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Подробное описание

These devices are power IC based on 650 V Power GaN HEMTs using proprietary (US patent pending) E-mode GaN on silicon technology.

The gate driver is integrated with the main power transistor resulting in fast switching, high system power density and low cost. Edge triggering narrow pulse is used to control device turn-on/off. This results in high noise immunity and small and inexpensive transformer for isolation and level shifting for the high-side switch in a half bridge application.

Классификация производителя

На английском языке: Datasheet GaNPower International GPI8HINOIC

JLCPCP: 2USD 2Layer 5PCBs, 5USD 4Layer 5PCBs