Datasheet GaNPower International GPI8HIRGIC

ПроизводительGaNPower International
СерияGPI8HIRGIC
МодельGPI8HIRGIC

GaN Power IC in DFN5x6 Package

Datasheets

Preliminary Datasheet GPI8HIRGIC
PDF, 539 Кб, Язык: анг., Файл закачен: 26 дек 2019, Страниц: 7
GaN Power IC in DFN5x6 Package
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Цены

Подробное описание

These devices are power IC based on 650 V Power GaN HEMTs using proprietary (US patent pending) E-mode GaN on silicon technology.

The gate driver is integrated with the main power transistor resulting in fast switching, high system power density and low cost. Edge triggering narrow pulse is used to control device turn-on/off. This results in high noise immunity and small and inexpensive transformer for isolation and level shifting for the high-side switch in a half bridge application.

Классификация производителя

На английском языке: Datasheet GaNPower International GPI8HIRGIC