Datasheet Power Integrations SID1132KQ — Даташит

ПроизводительPower Integrations
Datasheet Power Integrations SID1132KQ

Single Channel IGBT/MOSFET Gate Driver with Reinforced Isolation for Automotive Applications


Datasheet SID11x2KQ SCALE-iDriver Family
PDF, 1.7 Мб, Язык: анг., Файл закачен: 20 янв 2020, Страниц: 22
Up to 8 A Single Channel IGBT/MOSFET Gate Driver for Automotive Applications Providing Reinforced Galvanic Isolation up to 1200 V Blocking Voltage
Выписка из документа


Power Integrations
929 ₽
Россия и страны СНГ
52 061 ₽
DM Electronics
Power Integrations
83 491 ₽
Вебинар «Необычное в обычном. Сравнительный анализ современных решений Recom» (27.01.2022)

Подробное описание

The SID11xxKQ is a single channel IGBT and MOSFET driver in an eSOP package.

Reinforced galvanic isolation is provided by Power Integrations’ innovative solid insulator FluxLink technology. 8 A peak output drive current enables the product to drive IGBTs and MOSFETs up to 600 A (typical) without any additional active components. For gate drive requirements that exceed the stand-alone capability of the SID11xxKQ’s, an external amplifier (booster) may be added. Stable positive and negative voltages for gate control are provided by one unipolar isolated voltage source.

Additional features such as short-circuit protection (DESAT) with Advanced Soft Shut Down (ASSD), undervoltage lock-out (UVLO) for primary-side and secondary-side and rail-to-rail output with tempera-ture and process compensated output impedance guarantee safe operation even in harsh conditions.

Controller (PWM and fault) signals are compatible with 5 V CMOS logic, which may also be adjusted to 15 V levels by using external resistor divider.

Другие варианты исполнения


Классификация производителя

  • SCALE-iDriver IC Family

На английском языке: Datasheet Power Integrations SID1132KQ

Изготовление 1-4 слойных печатных плат за $2

Запись вебинара «Микросхемы для защиты цепей питания: ограничители всплесков напряжения и тока, контроллеры горячей замены, идеальные диоды»