Field Effect Transistor Silicon N Channel MOS Type
2SK1828
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1828
High Speed Switching Applications
Analog Switch Applications
• 2.5 V gate drive • Low threshold voltage: Vth = 0.5 to 1.5 V • High speed • Enhancement-mode • Small package Marking Unit: mm Equivalent Circuit JEDEC
JEITA SC-59 TOSHIBA 2-3F1F Weight: 0.012 g (typ.) Absolute Maximum Ratings (Ta = 25°C)
Characteristics TO-236MOD Symbol Rating Unit Drain-source voltage VDS 20 V Gate-source voltage VGSS 10 V DC drain current ID 50 mA Drain power dissipation PD 200 mW Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note: This transistor is electrostatic sensitive device.
Please handle with caution. Start of commercial production 1991-02 1 2014-03-01 2SK1828
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Drain-source breakdown voltage
Drain cut-off current Symbol Test Condition Min Typ. Max Unit IGSS VGS = 10 V, VDS = 0 ⎯ ⎯ 1 μA V (BR) DSS ID = 100 μA, VGS = 0 20 ⎯ ⎯ V IDSS VDS = 20 V, VGS = 0 ⎯ ⎯ 1 μA Vth VDS = 3 V, ID = 0.1 mA 0.5 ⎯ 1.5 V Forward transfer admittance ⎪Yfs⎪ VDS = 3 V, ID = 10 mA 20 ⎯ ⎯ mS Drain-source ON resistance RDS (ON) ID = 10 mA, VGS = 2.5 V ⎯ 20 40 Ω Gate threshold voltage Input capacitance Ciss VDS = 3 V, VGS = 0, f = 1 MHz ⎯ 5.5 ⎯ pF Reverse transfer capacitance Crss VDS = 3 V, VGS = 0, f = 1 MHz ⎯ 1.6 ⎯ pF Output capacitance Coss VDS = 3 V, VGS = 0, f = 1 MHz ⎯ 6.5 ⎯ pF Switching time Turn-on time ton VDD = 3 V, ID = 10 mA, VGS = 0 to 2.5 V ⎯ 0.14 ⎯ Turn-off time toff VDD = 3 V, ID = 10 mA, VGS = 0 to 2.5 V ⎯ 0.14 ⎯ μs Switching Time Test Circuit 2 2014-03-01 2SK1828 3 2014-03-01 2SK1828 4 2014-03-01 2SK1828
RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively "Product") without notice. …
