Datasheet Motorola MTP2N50E — Даташит

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by MTP2N50E/D SEMICONDUCTOR TECHNICAL DATA   Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET
2.0 AMPERES
500 VOLTS
RDS(on) = 3.6 OHM This high voltage MOSFET uses an advanced termination
scheme to provide enhanced voltage–blocking capability without
degrading performance over time. In addition, this advanced TMOS
E–FET is designed to withstand high energy in the avalanche and
commutation modes. The new energy efficient design also offers a
drain–to–source diode with a fast recovery time. Designed for high
voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients.  • Robust High Voltage Termination
• Avalanche Energy Specified
• Source–to–Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature D G CASE 221A–06, Style 5
TO–220AB
S MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Symbol Value Unit Drain–Source Voltage VDSS 500 Vdc Drain–Gate Voltage (RGS = 1.0 MΩ) VDGR 500 Vdc Gate–Source Voltage — Continuous …