Datasheet Wolfspeed C2M0045170D — Даташит

VDS ID @ 25˚C C2M0045170D Silicon Carbide Power MOSFET
TM
C2M MOSFET Technology RDS(on) 1700 V
72 A 45 mΩ N-Channel Enhancement Mode Features • • • • • Package High Blocking Voltage with Low On-Resistance
High Speed Switching with Low Capacitances
Easy to Parallel and Simple to Drive
Resistant to Latch-Up
Halogen Free, RoHS Compliant Benefits • • • • TO-247-3 Higher System Efficiency
Reduced Cooling Requirements
Increased Power Density
Increased System Switching Frequency Applications • • • • • Solar Inverters
Switch Mode Power Supplies
High Voltage DC/DC converters
Motor Drive
Pulsed Power Applications Part Number Package Marking C2M0045170D TO-247-3 C2M0045170 Maximum Ratings (TC = 25 ˚C unless otherwise specified)
Symbol Value Unit Test Conditions VDSmax Drain -Source Voltage 1700 V VGS = 0 V, ID = 100 μA VGSmax Gate -Source Voltage -10/+25 V Absolute maximum values, AC (f >1 Hz) VGSop Gate -Source Voltage -5/+20 V Recommended operational values ID Continuous Drain Current ID(pulse)
PD
TJ , Tstg 1 Parameter 72
48 A VGS =20 V, TC = 25˚C Note Fig. 19 VGS =20 V, TC = 100˚C Pulsed Drain Current 160 A Pulse width tP limited by Tjmax Fig. 22 Power Dissipation 520 W TC=25˚C, TJ = 150 ˚C Fig. 20 -40 to
+150 ˚C Operating Junction and Storage Temperature TL Solder Temperature 260 ˚C Md Mounting Torque 1
8.8 Nm
lbf-in C2M0045170D Rev. -, 06-2016 1.6mm (0.063”) from case for 10s
M3 or 6-32 screw Electrical Characteristics (TC = 25˚C unless otherwise specified) …