FDS7788
30V N-Channel PowerTrench MOSFET
General Description Features This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
"low side" synchronous rectifier operation, providing an
extremely low RDS(ON) in a small package. • 18 A, 30 V. RDS(ON) = 4.0 mΩ @ VGS = 10 V
RDS(ON) = 5.0 mΩ @ VGS = 4.5 V
• Low gate charge
• Fast switching speed Applications • High power and current handling capability • DC/DC converter • High performance trench technology for extremely
low RDS(ON) • Load switch
• Motor drives D D D D SO-8 S S S G Absolute Maximum Ratings
Symbol 5 4 6 3 7 2 8 1 TA=25oC unless otherwise noted Ratings Units VDSS Drain-Source Voltage Parameter 30 V VGSS Gate-Source Voltage ±20 V ID Drain Current 18 A - Continuous (Note 1a) - Pulsed 50 Power Dissipation for Single Operation PD (Note 1a) 2.5 (Note 1b) 1.2 (Note 1c) TJ, TSTG W 1.0
-55 to +150 °C (Note 1a) 50 °C/W (Note 1) 30 °C/W Operating and Storage Junction Temperature Range Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity FDS7788 FDS7788 13'' 12mm 2500 units 2005 Fairchild Semiconductor Corporation FDS7788 Rev F (W) FDS7788 February 2005 Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA ∆BVDSS
∆TJ
IDSS Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current ID = 250 µA, Referenced to 25°C
VDS = 24 V, VGS = 0 V 10 µA IGSSF Gate-Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA IGSSR Gate-Body Leakage, Reverse VGS = -20 V, VDS = 0 V -100 nA On Characteristics 30 V
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