Datasheet Vishay SI2308DS-T1-GE3 — Даташит

Si2308DS
Vishay Siliconix N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY
VDS (V)
60 RDS(on) (Ω) • Halogen-free According to IEC 61249-2-21
Available
• TrenchFET® Power MOSFET
• 100 % Rg Tested ID (A) 0.16 at VGS = 10 V 2.0 0.22 at VGS = 4.5 V 1.7 TO-236
(SOT-23) G 1
3 S D 2 Top View
Si2308DS (A8)*
* Marking Code
Ordering Information: Si2308DS-T1
Si2308DS-T1-E3 (Lead (Pb)-free)
Si2308DS-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Symbol Limit Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C
TA = 70 °C Pulsed Drain Currentb IDM Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa ID IS
TA = 25 °C
TA = 70 °C Operating Junction and Storage Temperature Range PD Unit
V 2.0
1.6
10 A 1.0
1.25 …