Datasheet Infineon IRLB8743PBF — Даташит

PD -96232 IRLB8743PbF
HEXFET® Power MOSFET Applications
l Optimized for UPS/Inverter Applications l High Frequency Synchronous Buck
Converters for Computer Processor Power
High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial use l VDSS RDS(on) max Qg 30V 3.2mΩ 36nC D G Benefits
l Very Low RDS(on) at 4.5V VGS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
l Lead-Free D S TO-220AB
IRLB8743PbF G D S Gate Drain Source Absolute Maximum Ratings
Parameter Max. VDS Drain-to-Source Voltage 30 VGS ± 20 ID @ TC = 25°C Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 110 ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) 78 c IDM Pulsed Drain Current PD @TC = 25°C Maximum Power Dissipation PD @TC = 100°C 150 A W 68
0.90 W/°C -55 to + 175
°C Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw i x Max. ––– 1.11 Case-to-Sink, Flat Greased Surface 0.5 ––– Junction-to-Ambient ––– 62 Junction-to-Case RθCS
RθJA Parameter 300 (1.6mm from case)
10lbfxin (1.1N m) Typ. RθJC h Notes through ‡ are on page 9 www.irf.com f 140 Operating Junction and
Storage Temperature Range Thermal Resistance V 620 h
Maximum Power Dissipation h Linear Derating Factor
TJ …