Datasheet Vishay SI1308EDL-T1-GE3 — Даташит

Si1308EDL
www.vishay.com Vishay Siliconix N-Channel 30 V (D-S) MOSFET
FEATURES PRODUCT SUMMARY
VDS (V)
30 RDS(on) (Ω) MAX. ID (A) c 0.132 at VGS = 10 V 1.5 0.144 at VGS = 4.5 V 1.4 0.185 at VGS = 2.5 V 1.3 • TrenchFET® power MOSFET Qg (TYP.) • 100 % Rg tested
• Typical ESD performance 1800 V 1.4 nC • Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912 SOT-323
SC-70 (3 leads) APPLICATIONS D
3 D • Smart phones, tablet PC’s
-DC/DC converters
-Boost converters
-Load switch, OVP switch 2
S G 1
G
Top View Marking Code: KG S
N-Channel MOSFET Ordering Information:
Si1308EDL-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ± 12 Continuous Drain Current (TJ = 150 °C) TC = 25 °C 1.4 TC = 70 °C 1.1 ID TA = 25 °C Continuous Source-Drain Diode Current 1.2 a, b
IDM TC = 25 °C 0.4
0.3 TC = 25 °C
Maximum Power Dissipation 0.5 TC = 70 °C 0.3 PD TA = 25 °C 0.4 a, b W 0.3 a, b TA = 70 °C
Operating Junction and Storage Temperature Range A 6 IS TA = 25 °C V 1.5 a, b TA = 70 °C …