Datasheet Vishay SiHF840L-GE3 — Даташит

IRF840L, SiHF840L
www.vishay.com Vishay Siliconix Power MOSFET
FEATURES D I2PAK
(TO-262) • Dynamic dV/dt rating
• Repetitive avalanche rated
Available • Fast switching
G • Ease of paralleling Available • Simple drive requirements
S • Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912 S D
G Note
* This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details N-Channel MOSFET PRODUCT SUMMARY
VDS (V) 500 RDS(on) (Ω) VGS = 10 V Qg max. (nC) 63 Qgs (nC) 9.3 Qgd (nC) DESCRIPTION 0.85 Third generation power MOSFETs from Vishay provide the
designer with best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The I2PAK (TO-262) is a power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and lowest possible on-resistance.
The I2PAK (TO-262) is suitable for high current applications
because of its low internal connection resistance and can …