isc Silicon PNP Power Transistor 2N6423 DESCRIPTION Collector-Emitter Breakdown Voltage: VCEO=-300V(Min) Minimum Lot-to-Lot variations for robust device
Performance and reliable operation
APPLICATIONS Power amplifier and switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER VALUE UNI
T VCBO Collector-Base Voltage -500 V VCEO Collector-Emitter Voltage -300 V VEBO Emitter-Base Voltage -6 V Collector Current-Continuous -2 A PD Collector Power Dissipation
@ TC=25℃ 35 W TJ Junction Temperature -65~200 ℃ Storage Temperature Range -65~200 ℃ IC Tstg isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2N6423 ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC=-50mA IEBO Emitter -Base Cutoff Current VBE=-6V ICEO Collector-Emitter Cutoff Current VCE(sat)-1 MIN TYP. MAX -300 UNIT
V -500 uA VCB=-150V -5 mA Collector-Emitter Saturation Voltage IC= -0.75A; IB=-0.075A -1 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -1A; IB=-0.125A -1 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= -0.75A; IB=-0.075A -1.8 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= -1A; IB=-0.125A -1.8 V hFE-1 DC Current Gain IC=-0.75A; VCE=-2V 10 100 hFE-2 DC Current Gain IC=-0.75A; VCE= -10V 30 150 NOTICE：
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
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incidental damages. isc website： www.iscsemi.com 2 isc & iscsemi is registered trademark …
