2SAR586J
Datasheet PNP -5.0A -80V Power Transistor l Outline Parameter Value VCEO -80V IC -5A TO-263AB
LPTL l Features l Inner circuit 1) Suitable for Power Driver.
2) Complementary NPN Types : 2SCR586J
3) Low V CE(sat )
VCE(sat)=-320mV(Max.).(IC/IB=-2A/-100mA) l Application LOW FREQUENCY AMPLIFIER l Packaging specifications Part No. Package Taping
code 2SAR586J LPTL
(TO-263AB) TLL Reel size Tape width Quantity
(mm)
(mm)
(pcs)
330 24 1000 Marking
AR586 www.rohm.com
© 2019 ROHM Co., Ltd. All rights reserved. 1/6 20190423 -Rev.001 2SAR586J Datasheet l Absolute maximum ratings (Ta = 25°C) Parameter Symbol Values Unit Collector-base voltage VCBO -80 V Collector-emitter voltage VCEO -80 V Emitter-base voltage VEBO -6 V IC -5 A ICP*1 -10 A PD*2 40 W Tj 150 ℃ Tstg -55 to +150 ℃ Collector current
Power dissipation
Junction temperature
Range of storage temperature
l Electrical characteristics (Ta = 25°C) Min. Values
Typ. Max. IC = -100μA -80 -V BVCEO IC = -1mA -80 -V BVEBO IE = -100μA -6 -V Collector cut-off current ICBO VCB = -80V -1 μA Emitter cut-off current IEBO VEB = -4V -1 μA VCE(sat)*3 IC = -2A, IB = -100mA -160 -320 mV Parameter Symbol Collector-base breakdown voltage BVCBO Collector-emitter breakdown
voltage
Emitter-base breakdown voltage Collector-emitter saturation voltage Conditions Unit hFE*3 VCE = -3V, IC = -500mA 120 -390 -Transition frequency f T*3 VCE = -10V, IE = 500mA,
f = 100MHz -200 -MHz Output capacitance Cob VCB = -10V, IE = 0A, …
