Datasheet HGTP7N60A4 - Fairchild Даташит IGBT, N, TO-220 — Даташит

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Подробное описание

Производитель: Fairchild

Описание: IGBT, N, TO-220

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Краткое содержание документа:
HGT1S7N60A4S9A, HGTG7N60A4 HGTP7N60A4
Data Sheet September 2004
600V, SMPS Series N-Channel IGBT
The HGT1S7N60A4S9A, HGTG7N60A4 and HGTP7N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors.

These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies. Formerly Developmental Type TA49331.
Features

Спецификации:

• Тип транзистора: IGBT
• DC Collector Current: 34 А
• Collector Emitter Voltage Vces: 2.7 В
• Power Dissipation Max: 125 Вт
• Collector Emitter Voltage V(br)ceo: 600 В
• Корпус транзистора: TO-220AB
• Количество выводов: 3
• SVHC: No SVHC (18-Jun-2010)
• Current Ic Continuous a Max: 34 А
• Current Temperature: 25°C
• Fall Time tf: 45 нс
• Full Power Rating Temperature: 25°C
• Количество транзисторов: 1
• Package / Case: TO-220AB
• Pin Format: GCE
• Power Dissipation: 125 Вт
• Power Dissipation Pd: 125 Вт
• Power Dissipation Ptot Max: 125 Вт
• Pulsed Current Icm: 56 А
• Rise Time: 11 нс
• SVHC (Secondary): Bis (2-ethyl(hexyl)phthalate) (DEHP) (18-Jun-2010)
• Termination Type: Through Hole
• Полярность транзистора: N
• Voltage Vces: 600 В

RoHS: есть

Дополнительные аксессуары:

• Fischer Elektronik - WLK 5