Datasheet IHW20N120R3 - Infineon Даташит IGBT+ DIODE,1200V,20A,TO247 — Даташит
Наименование модели: IHW20N120R3
Купить IHW20N120R3 на РадиоЛоцман.Цены — от 54 до 720 ₽ 38 предложений от 21 поставщиков Биполярный транзистор IGBT, 1200 В, 40 А, 310 Вт | |||
H20R1203 TO-247 IHW20N120R3 H40RF60 IHW40N60RF H40R1203 H30R1602 H30R1202 H25R1202 H20R1202 H15R1203 IHW30N120R2 H20R1353 | 54 ₽ | ||
IHW20N120R3FKSA1 Infineon | 62 ₽ | ||
IHW20N120R3 Infineon | 212 ₽ | ||
IHW20N120R3FKSA1 Infineon | 252 ₽ |
Подробное описание
Производитель: Infineon
Описание: IGBT+ DIODE,1200V,20A,TO247
Краткое содержание документа:
IHW20N120R3
IH-series
Reverse conducting IGBT with monolithic body diode
Features: · Powerful monolithic body diode with low forward voltage designed for soft commutation only · TrenchStop® technology applications offers: - very tight parameter distribution - high ruggedness, temperature stable behavior - low VCEsat - easy parallel switching capability due to positive temperature coefficient in VCEsat · Low EMI · Qualified according to JEDEC J-STD-020 and JESD-022 for target applications · Pb-free lead plating; RoHS compliant · Complete product spectrum and PSpice Models: http://www.infineon.com/igbt/ Applications: · Inductive cooking
C G E
Спецификации:
- Тип транзистора: IGBT
- DC Collector Current: 20 А
- Collector Emitter Voltage Vces: 1.7 В
- Power Dissipation Max: 310 Вт
- Collector Emitter Voltage V(br)ceo: 1.2kV
- Operating Temperature Range: -40°C to +175°C
- Корпус транзистора: TO-247
- Количество выводов: 3
RoHS: есть
Дополнительные аксессуары:
- Fischer Elektronik - THFU 2