Datasheet Diodes ZTX869 — Даташит

ZTX869
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C)
MIN. TYP. MAX. UNIT CONDITIONS. 800 900 mV IC=5A, VCE=1V* NPN SILICON PLANAR MEDIUM POWER
HIGH CURRENT TRANSISTOR PARAMETER SYMBOL Base-Emitter
Turn-On Voltage VBE(on) Static Forward
Current Transfer
Ratio hFE Transition Frequency fT 100 MHz IC=100mA, VCE=10V
f=50MHz Output Capacitance Cobo 70 pF VCB=10V, f=1MHz PARAMETER SYMBOL Switching Times ton
toff 60
680 ns
ns IC=1A, IB1=100mA
IB2=100mA, VCC=10V Collector-Base Voltage
Collector-Emitter Voltage *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Emitter-Base Voltage THERMAL CHARACTERISTICS Practical Power Dissipation* Ptotp IC=10mA, VCE=1V
IC=1A, VCE=1V*
IC=5A, VCE=1V*
IC=20A, VCE=1V* 450
450
400
100 300
300
250
40 PARAMETER
Thermal Resistance: Junction to Ambient …