Datasheet NSS40301MZ4T1G - ON Semiconductor Даташит Биполярный транзистор, NPN, 40 В, SOT-223 — Даташит
Наименование модели: NSS40301MZ4T1G
![]() 32 предложений от 15 поставщиков Биполярный транзистор, NPN, 40 В, 3 А, 2 Вт, SOT-223, Surface Mount | |||
NSS40301MZ4T1G ON Semiconductor | 24 ₽ | ||
NSS40301MZ4T1G ON Semiconductor | от 33 ₽ | ||
NSS40301MZ4T1G ON Semiconductor | от 34 ₽ | ||
NSS40301MZ4T1G ON Semiconductor | от 48 ₽ |
Подробное описание
Производитель: ON Semiconductor
Описание: Биполярный транзистор, NPN, 40 В, SOT-223
Краткое содержание документа:
NSS40301MZ4 Bipolar Power Transistors 40 V, 3.0 A, Low VCE(sat) NPN Transistor
ON Semiconductor's e2 PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability.
These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical applications are DC-DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU's control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers.
Features http://onsemi.c
Спецификации:
- Полярность транзистора: NPN
- Collector Emitter Voltage V(br)ceo: 40 В
- Transition Frequency Typ ft: 200 МГц
- Power Dissipation Pd: 2 Вт
- DC Collector Current: 3 А
- DC Current Gain Max (hfe): 200
RoHS: есть
Дополнительные аксессуары:
- WAKEFIELD SOLUTIONS - 217-36CTRE6