Datasheet NDT014L - Fairchild Даташит Полевой транзистор, N — Даташит
Наименование модели: NDT014L
![]() 33 предложений от 19 поставщиков Силовой МОП-транзистор, N Канал, 60 В, 2.8 А, 0.12 Ом, SOT-223, Surface Mount | |||
NDT014L Fairchild | 24 ₽ | ||
NDT014L | 1 026 ₽ | ||
NDT014L_SB9D008 Fairchild | по запросу | ||
NDT014L ON Semiconductor | по запросу |
Подробное описание
Производитель: Fairchild
Описание: Полевой транзистор, N
Краткое содержание документа:
August 1996
NDT014L N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes.Thesedevices are particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed.
Features
Спецификации:
- Полярность транзистора: N Channel
- Continuous Drain Current Id: 2.8 А
- Drain Source Voltage Vds: 60 В
- On Resistance Rds(on): 170 МОм
- Rds(on) Test Voltage Vgs: 10 В
- Threshold Voltage Vgs Typ: 1.5 В
- Рассеиваемая мощность: 3 Вт
- Корпус транзистора: SOT-223
- Количество выводов: 4
- SVHC: No SVHC (19-Dec-2011)
- Current Id Max: 2.8 А
- Тип корпуса: SOT-223
- Способ монтажа: SMD
- Voltage Vds Typ: 60 В
- Voltage Vgs Max: 1.5 В
- Voltage Vgs Rds on Measurement: 4.5 В
RoHS: Y-Ex