Datasheet HUF75307D3 - Fairchild Даташит Полевой транзистор, N I-PAK — Даташит
Наименование модели: HUF75307D3
 Купить HUF75307D3 на РадиоЛоцман.Цены — от 7.83 до 76 ₽19 предложений от 19 поставщиков , Power Field-Effect Transistor, 13A I(D), 55V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | |||
| HUF75307D3 Rochester Electronics | 37 ₽ | ||
| HUF75307D3ST_NL Fairchild | 70 ₽ | ||
| HUF75307D3ST_NL Fairchild | 76 ₽ | ||
| HUF75307D3ST136 Fairchild | по запросу | ||
Подробное описание
Производитель: Fairchild
Описание: Полевой транзистор, N I-PAK
Скачать Data SheetКраткое содержание документа:
HUF75307P3, HUF75307D3, HUF75307D3S
Data Sheet June 1999 File Number
4353.6
15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs
These N-Channel power MOSFETs are manufactured using the innovative UltraFETTM process.
This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products. Formerly developmental type TA75307.
Спецификации:
- Полярность транзистора: N Channel
- Continuous Drain Current Id: 13 А
- Drain Source Voltage Vds: 55 В
- On Resistance Rds(on): 90 МОм
- Корпус транзистора: TO-251
- SVHC: No SVHC (15-Dec-2010)
- Current Temperature: 25°C
- Full Power Rating Temperature: 25°C
- Lead Length: 9.65 мм
- Расстояние между выводами: 2.28 мм
- Количество транзисторов: 1
- Тип корпуса: TO-251 (I-Pak)
- Power Dissipation Pd: 35 Вт
- Время выключения: 45 нс
- Время включения: 40 нс
