Datasheet FDFS6N303 - Fairchild Даташит Полевой транзистор, N, SCHOTTKY, SMD, SO-8 — Даташит
Наименование модели: FDFS6N303
 Купить FDFS6N303 на РадиоЛоцман.Цены — от 22 до 70 ₽15 предложений от 15 поставщиков MOSFET N-CH 30V 6A 8-SOIC. N-Channel 30V 6A (Ta) 900mW (Ta) Surface Mount 8-SOIC. Transistors - FETs, MOSFETs - Single | |||
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Подробное описание
Производитель: Fairchild
Описание: Полевой транзистор, N, SCHOTTKY, SMD, SO-8
Скачать Data SheetКраткое содержание документа:
October 2001
FDFS6N303 FETKEY N-Channel MOSFET with Schottky Diode
General Description
Fairchild Semiconductor's FETKEY technology incorporates a high cell density MOSFET and low forward drop (0.35V) Schottky diode into a single surface mount power package.
The MOSFET and Schottky diode are isolated inside the package. The general purpose pinout has been chosen to maximize flexibility and ease of use. FETKEY products are particularly suited for switching applications such as DC/DC buck, boost, synchronous, and non-synchronous converters where the MOSFET is driven as low as 4.5V and fast switching, high efficiency and small PCB footprint is desirable.
Features
Спецификации:
- Полярность транзистора: N Channel
- Continuous Drain Current Id: 6 А
- Drain Source Voltage Vds: 30 В
- On Resistance Rds(on): 35 МОм
- Rds(on) Test Voltage Vgs: 10 В
- Voltage Vgs Max: 20 В
- Рабочий диапазон температрур: -55°C ... +150°C
- Корпус транзистора: SOIC
- Количество выводов: 8
- SVHC: No SVHC (15-Dec-2010)
- Current Id Max: 30 А
- Forward Current If(AV): 5 мА
- Forward Voltage VF Max: 500 мВ
- Тип корпуса: SOIC
- Power Dissipation Pd: 2 мВт
- Способ монтажа: SMD
- Threshold Voltage Vgs Typ: 1.7 В
- Voltage Vds Typ: 30 В
- Voltage Vgs Rds on Measurement: 10 В
- Voltage Vgs th Max: 3 В
RoHS: есть
Дополнительные аксессуары:
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